? 2008 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c, r gs = 1m 500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c60 a i dm t c = 25 c, pulse width limited by t jm 150 a i a t c = 25 c60 a e as t c = 25 c3 j p d t c = 25 c 960 w t j -55...+150 c t jm 150 c t stg -55...+150 c t l 1.6mm (0.063 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (ixtk) 1.13/10 nm/lb.in. f c mounting force (ixtx) 20..120 / 4.5..27 n/lb. weight to-264 10 g plus247 6 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 500 v v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss 50 a v gs = 0v t j = 125 c 5 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 100 m linearl2 tm power mosfet w/extended fbsoa ixtk 60n50l2 ixtx 60n50l2 n-channel enhancement mode avalanche rated v dss = 500v i d25 = 60a r ds(on) < 100m ds100087(12/08) g = gate d = drain s = source tab = drain to-264 g d s g d s plus247 (tab) (tab) preliminary technical information features z designed for linear operation z international standard packages z avalanche rated z guaranteed fbsoa at 75 c advantages ? easy to mount ? space savings ? high power density applications z solid state circuit breakers z soft start controls z linear amplifiers z programmable loads z current regulators
ixys reserves the right to change limits, test conditions, and dimensions. ixtk60n50l2 IXTX60N50L2 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 18 25 32 s c iss 24 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1325 pf c rss 172 pf t d(on) 40 ns t r 40 ns t d(off) 165 ns t f 38 ns q g(on) 610 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 130 nc q gd 365 nc r thjc 0.13 c/w r thcs 0.15 c/w safe operating area specification symbol test conditions characteristic values min. typ. max. soa v ds = 400v, i d = 1.1a, t c = 75 c, tp = 3s 440 w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 60 a i sm repetitive, pulse width limited by t jm 240 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 980 ns i rm 73 a q rm 35.8 c ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t 300 s; duty cycle, d 2%. resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 0.5 (external) to-264 (ixtk) outline preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. i f = 60a, -di/dt = 100a/ s, v r = 100v, v gs = 0v dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus 247 tm (ixtx) outline
? 2008 ixys corporation, all rights reserved ixtk60n50l2 IXTX60N50L2 fig. 1. output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 45 50 55 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v ds - volts i d - amperes v gs = 20v 14v 12v 10v 7 v 8 v 5 v 6 v 9 v fig. 2. extended output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 20v 14v 12v 7 v 6 v 9 v 10 v 8 v fig. 3. output characteristics @ 125oc 0 5 10 15 20 25 30 35 40 45 50 55 60 012345678910 v ds - volts i d - amperes v gs = 20v 12v 10v 9v 6 v 8v 7v 5 v fig. 4. r ds(on) normalized to i d = 30a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 60a i d = 30a fig. 5. r ds(on) normalized to i d = 30a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 20 40 60 80 100 120 140 160 i d - amperes r ds(on) - normalized v gs = 10v 20v - - - - t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 5 10 15 20 25 30 35 40 45 50 55 60 65 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes ixys ref: t_60n50l2(9r)12-08-08-b
ixys reserves the right to change limits, test conditions, and dimensions. ixtk60n50l2 IXTX60N50L2 fig. 7. input admittance 0 10 20 30 40 50 60 70 80 90 100 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 55 0 102030405060708090100110 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 140 160 180 200 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 100 200 300 400 500 600 700 800 900 q g - nanocoulombs v gs - volts v ds = 250v i d = 30a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2008 ixys corporation, all rights reserved ixtk60n50l2 IXTX60N50L2 ixys ref: t_60n50l2(9r)12-08-08-b fig. 13. forward-bias safe operating area @ t c = 25oc 0.1 1.0 10.0 100.0 1,000.0 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms 100ms dc fig. 14. forward-bias safe operating area @ t c = 75oc 0.1 1.0 10.0 100.0 1,000.0 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 75oc single pulse 25s 1ms 100s r ds(on) limit 10ms 100ms dc
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